Wideband Steady-State Model of a Strained InGaAsP MQW-SOA - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse
Article Dans Une Revue Journal of Lightwave Technology Année : 2016

Wideband Steady-State Model of a Strained InGaAsP MQW-SOA

Résumé

A steady-state model of a strained MQW-SOA is described. Least-squares fitting of the model to experimental polarization resolved amplified spontaneous emission spectra is used to obtain difficult to measure model parameters such as the linebroadening lineshape parameters, Auger recombination, bandgap shrinkage, and intervalence band absorption coefficients. Well capture and escape processes are modeled by a carrier density dependent net escape time which accounts for barrier effects. Simulations and comparisons with experimental data are given which demonstrate the accuracy and versatility of the model.
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Dates et versions

hal-02053551 , version 1 (01-03-2019)

Identifiants

  • HAL Id : hal-02053551 , version 1

Citer

Michael Connelly, Simone Mazzucato, Hélène Carrère, Xavier Marie, Thierry Amand, et al.. Wideband Steady-State Model of a Strained InGaAsP MQW-SOA. Journal of Lightwave Technology, 2016, 34 (11), pp.2656-2662. ⟨hal-02053551⟩
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