Two-dimensional semiconductors in the regime of strong light-matter coupling - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse
Journal Articles Nature Communications Year : 2018

Two-dimensional semiconductors in the regime of strong light-matter coupling

Abstract

The optical properties of transition metal dichalcogenide monolayers are widely dominated by excitons, Coulomb-bound electron–hole pairs. These quasi-particles exhibit giant oscillator strength and give rise to narrow-band, well-pronounced optical transitions, which can be brought into resonance with electromagnetic fields in microcavities and plasmonic nanostructures. Due to the atomic thinness and robustness of the monolayers, their integration in van der Waals heterostructures provides unique opportunities for engineering strong light-matter coupling. We review first results in this emerging field and outline future opportunities and challenges.
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Dates and versions

hal-02057649 , version 1 (16-05-2019)

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Christian Schneider, Mikhail Glazov, Tobias Korn, Sven Höfling, Bernhard Urbaszek. Two-dimensional semiconductors in the regime of strong light-matter coupling. Nature Communications, 2018, 9 (1), ⟨10.1038/s41467-018-04866-6⟩. ⟨hal-02057649⟩
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