Spin-coherent dynamics and carrier lifetime in strained Ge 1 − x Sn x semiconductors on silicon
Abstract
We demonstrate an effective epitaxial route for the manipulation and further enrichment of the intriguing spin-dependent phenomena boasted by germanium. We show optical initialization and readout of spins in Ge-rich germanium-tin alloys and report on spin quantum beats between Zeeman-split levels under an external magnetic field. While heavy Sn atoms can be readily utilized to strengthen the spin-orbit coupling, our experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that noticeably approaches the nanosecond regime at room temperature. In addition, time decay photoluminescence experiments evidence a temperature-induced monotonic decrease of the carrier lifetime, eventually providing crucial insights also into nonradiative recombination mechanisms.
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